Quantum Electronics and Spintronics

This project aims at creating new topological magnets showing gigantic electrical and magnetic responses. Manipulation of their nanoscale domain structures may lay the foundation for conceptually new spintronic devices with unprecedented energy efficiency and storage capacity, bringing in a new era of information technology. In particular, antiferromagnetic materials allow designs of much more highly integrated and high-speed memory cells than commonly used ferromagnetic counterparts. Based on our discoveries of new materials with fascinating functions, our project aims at forming a new scheme of nonvolatile memory, logic circuit, beyond 5G technology necessary for creating our smart and sustainable society.

Contact

〒113-0033

東京都文京区本郷7-3-1

​理学部1号舘

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