In the research seminar on May 16, 2023, Dr. Guohan Hu, Distinguished Research Scientist at the IBM T.J. Watson Research Center, gave us an illuminating introductory talk on the current status and future trend of STT-MRAM.
Dr. Guohan Hu joined IBM in 2006 as a Research Staff Member working on magnetic random access memories (MRAM). She has been the manager of the MRAM Materials and Devices group since 2013. Her area of expertise is magnetic thin film growth and characterization for STT-MRAM applications.
